Electronic Chemicals G4 Phosphoric Acid (Semiconductor Wet Chemical)

Electronic Chemicals G4 Phosphoric Acid (Semiconductor Wet Chemical)

Document Revision: 01
Issue Date: 2026-09-02
Applicable Standard: SEMI G4 Grade (Semiconductor Ultra-High Purity Wet Chemical)

Product Identification

 

Item

Specification

Product Name

G4 Phosphoric Acid

Product Category

Semiconductor Electronic Wet Chemical

Chemical Name

Phosphoric Acid

Chemical Formula

H₃PO₄

CAS No.

7664-38-2

Molecular Weight

98.00

UN Number

1805

Grade

SEMI G4 Ultra-High Purity Electronic Grade

 

Product Overview

 

G4 Phosphoric Acid is an ultra-high-purity weak inorganic acid specially refined for advanced semiconductor wafer fabrication and microelectronics manufacturing. Produced through multi-stage purification, ultra-fine filtration and Class 1000 clean-room sealed filling processes, the product features extremely low trace metal ions, anionic impurities and micro-particles, fully compliant with strict SEMI G4 international semiconductor standards.

 

This chemical possesses excellent selective etching performance for silicon nitride, aluminum thin films and specific dielectric materials, with stable etching rate and superior process controllability. It causes minimal damage to silicon substrates and oxide layers, effectively removing surface residual contaminants and meeting ultra-high cleanliness requirements for advanced wafer processes. Strict impurity control eliminates micro-defect risks, ensuring high yield and stable operation for high-precision semiconductor manufacturing.

 

Appearance: Colorless, transparent, syrupy viscous liquid, odorless

 

Technical Specifications (SEMI G4 Standard)

 

Test Item

Specification

H₃PO₄ Assay

84.0 ~ 86.0 wt%

Appearance

Colorless & clear transparent viscous liquid

Color (APHA)

≤ 10

Density @ 20°C

1.68 ~ 1.71 g/cm³

Evaporation Residue

≤ 30 ppb

Individual Trace Metals (Na, K, Ca, Mg, Fe, Cu, Al, Zn, Ni, Cr)

≤ 10 ppb each

Sulfate (SO₄²⁻)

≤ 30 ppb

Chloride (Cl⁻)

≤ 30 ppb

Nitrate (NO₃⁻)

≤ 30 ppb

Reducing Substances (as H₃PO₃)

≤ 50 ppb

Particles ≥0.2μm

≤ 100 pcs/mL

 

Note: All test data is based on batch-specific COA (Certificate of Analysis).

 

Applications (Semiconductor Wet Process)

 

Silicon Nitride & Aluminum Film Etching: Core wet etching chemical for semiconductor front-end processes, used for precision etching of Si₃N₄ thin films, aluminum metal gates and aluminum pad layers. It features excellent etching selectivity, effectively protecting silicon oxide and silicon substrate while ensuring uniform and stable etching morphology.

Wafer Surface Precision Cleaning: Removes micro-particles, residual inorganic impurities and surface trace contaminants generated during etching and deposition processes. Low-ion characteristic avoids secondary pollution, maintaining ultra-high surface cleanliness of wafers for advanced lithography and deposition processes.

Compound Wet Solution Formulation: Used for preparing high-purity mixed etching and cleaning solutions for semiconductor special processes, matching high-precision micro-nano manufacturing requirements of integrated circuits.

MEMS & Advanced Semiconductor Packaging: Applied for micro-etching and surface treatment of MEMS devices, micro-sensors and advanced chip packaging structures, ensuring precise pattern definition and stable device performance.

 

Packaging & Filling Standard

 

Packaging Type: Clean-grade corrosion-resistant HDPE sealed drum, dedicated high-purity phosphoric acid packaging

Common Specification: 25kg / 30kg small drum, 1000kg corrosion-resistant IBC tote

Filling Environment: Class 1000 clean room, fully closed ultra-pure filling system, strictly controlling particle and impurity introduction to avoid secondary contamination

Sealing Standard: High-tightness leak-proof sealed structure, anti-pollution and anti-deterioration, ensuring long-term purity stability

 

Storage & Shelf Life

 

● Store in cool, dry, ventilated dedicated chemical warehouse, keep tightly sealed, away from direct sunlight, high temperature and heat sources.

● Isolate from alkaline substances, strong oxidants, metal powders and corrosive incompatible materials to prevent chemical reactions and purity degradation.

● Avoid long-term open placement and moisture absorption to prevent impurity enrichment and performance change.

● Shelf Life: 12 months under standard sealed storage conditions

 

Handling & Safety Precautions

 

● Phosphoric acid is moderately corrosive and hygroscopic. Operators must wear standard complete PPE: acid-resistant gloves, chemical safety goggles, corrosion-resistant apron and protective work clothes.

● All dilution, sampling and handling operations must be carried out in a professional fume hood to avoid inhalation of mist and direct contact with skin and mucous membranes.

● During dilution, slowly add phosphoric acid into deionized water; never add water into concentrated phosphoric acid to prevent splashing and chemical injury.

● In case of liquid splashing, skin contact or leakage, conduct emergency cleaning and disposal immediately in accordance with standard operating procedures.

● Refer to the official SDS document for comprehensive hazard information, transportation regulations and detailed first-aid measures.

 

Quality Assurance

 

Each batch of G4 Phosphoric Acid is produced, purified and inspected in strict accordance with SEMI G4 international semiconductor industry standards. Every shipment is equipped with a batch-specific official COA. The whole production and filling process adopts strict clean-room contamination control and high-purity management, ensuring ultra-low impurities, stable batch consistency and high process adaptability, fully meeting the stringent wet process requirements of advanced semiconductor manufacturing.

 

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