Electronic Chemicals G4 Hydrochloric Acid

Electronic Chemicals G4 Hydrochloric Acid

Document Revision: 01
Issue Date: 2026-09-02
Applicable Standard: SEMI G4 Grade (Semiconductor Ultra-High Purity Wet Chemical)

Product Identification

 

Item

Specification

Product Name

G4 Hydrochloric Acid

Product Category

Semiconductor Electronic Wet Chemical

Chemical Name

Hydrochloric Acid

Chemical Formula

HCl

CAS No.

7647-01-0

Molecular Weight

36.46

UN Number

1789

Grade

SEMI G4 Ultra-High Purity Electronic Grade

 

Product Overview

 

G4 Hydrochloric Acid is a high-purity inorganic acid specially purified for semiconductor wafer fabrication and advanced microelectronics manufacturing. Produced via ultra-purification, low-contamination filtration and clean-room filling processes, this product features ultra-low trace metal ions, anionic impurities and micro-particles, fully complying with SEMI G4 industry specifications.


It is a core wet chemical for semiconductor front-end processes, effectively removing metallic contaminants, ionic residues and oxide impurities on wafer surfaces. Strict impurity control eliminates micro-contamination risks, ensuring high yield and stable performance for advanced chip manufacturing processes.


Appearance: Colorless, transparent and clear liquid with slight pungent odor

 

Technical Specifications (SEMI G4 Standard)

 

Test Item

Specification

HCl Assay

36.0 ~ 38.0 wt%

Appearance

Colorless & clear transparent liquid

Color (APHA)

≤ 10

Density @ 20°C

1.18 ~ 1.19 g/cm³

Evaporation Residue

≤ 50 ppb

Individual Trace Metals (Na, K, Ca, Mg, Fe, Cu, Al, Zn, Ni, Cr)

≤ 10 ppb each

Sulfate (SO₄²⁻)

≤ 50 ppb

Nitrate (NO₃⁻)

≤ 50 ppb

Free Chlorine (Cl₂)

≤ 50 ppb

Phosphate (PO₄³⁻)

≤ 30 ppb

Particles ≥0.2μm

≤ 100 pcs/mL

 

Note: All test data is based on batch-specific COA (Certificate of Analysis).

 

Applications (Semiconductor Wet Process)

 

Wafer Surface Cleaning: Remove residual metal ions, inorganic contaminants and surface oxide layers on silicon wafers, improve wafer surface cleanliness for subsequent etching and deposition processes.

Semiconductor Wet Etching: Used for precision micro-etching of silicon-based materials and compound semiconductor substrates with stable etching rate and uniform processing effect.

Process Solution Preparation: Formulate mixed cleaning and etching solutions for RCA cleaning process, matching advanced semiconductor front-end manufacturing requirements.

Advanced Packaging & MEMS Process: Surface treatment and impurity removal for MEMS devices, chip packaging and microelectronic component processing.

 

Packaging & Filling Standard

 

Packaging Type: Clean-grade HDPE sealed drum / IBC clean tote

Common Specification: 25kg / 30kg small drum, 1000kg IBC tote

Filling Environment: Class 1000 clean room, zero secondary contamination, strictly controlled particle and impurity introduction

Sealing Standard: Professional acid-resistant sealed packaging, anti-volatilization and anti-leakage

 

Storage & Shelf Life

 

● Store in cool, dry, ventilated and dedicated chemical warehouse, keep tightly sealed, away from direct sunlight, high temperature and heat sources.

● Isolate from alkaline substances, oxidants and organic chemicals to avoid chemical reaction and contamination.

● Strictly avoid long-term open placement to prevent volatile deterioration and impurity absorption.

● Shelf Life: 12 months under standard sealed storage conditions

 

Handling & Safety Precautions

 

● Hydrochloric acid is corrosive and volatile. Operators must wear complete PPE: acid-resistant gloves, chemical goggles, corrosion-resistant apron and protective clothing.

● Operate in ventilated environment; avoid inhalation of volatile gas and direct contact with skin and eyes.

● Dilution operation: slowly add acid into water, never add water into concentrated hydrochloric acid to prevent splashing and injury.

● In case of contact or leakage, follow SDS emergency guidelines for timely cleaning and disposal.

● For full hazard classification, transportation rules and first-aid measures, refer to the official SDS document.

 

Quality Assurance

 

Each batch of G4 Hydrochloric Acid is produced and inspected in accordance with SEMI G4 international standards. Every shipment is accompanied with an official batch COA. All production, purification and filling processes adopt strict clean-room contamination control to ensure stable and consistent product quality for high-end semiconductor manufacturing applications.

 

Hydrochloric acid Specification

 

Product Name

Grade

Relative molecular mass

Molecular formula

Hydrochloric acid

Electronic chemicals G4

36.46

HCl

 

Inspect items

Specifications

Inspect items

Specifications

Appearance

Colorless transparent aqueous hydrogen chloride solution

Nickel (Ni), ppt

≤100

Assay (HCl), %

36.0~38.0

Cupric (Cu), ppt

≤100

Chromaticity, Hazen units

≤10

Zinc (Zn), ppt

≤100

Burning residue (sulfate basis), ppm

≤3

Gallium (Ga), ppt

≤100

free available chlorine (Cl), ppb

≤100

Germanium (Ge), ppt

≤100

Ammonium (NH₄), ppb

≤100

Arsenic (As), ppt

≤100

Sulfate (SO₄), ppb

≤100

Stantium (Sr), ppt

≤100

Sulfites (SO₂), ppb

≤100

Zirconium (Zr), ppt

≤100

Phosphate (PO₄), ppb

≤100

Niobium (Nb), ppt

≤100

Lithium (Li), ppt

≤100

Molybdenum (Mo), ppt

≤100

Berylium (Be), ppt

≤100

Silver (Ag), ppt

≤100

Boron (B), ppt

≤100

Cadmium (Cd), ppt

≤100

Sodium (Na), ppt

≤100

Tin (Sn), ppt

≤100

Magnesium (Mg), ppt

≤100

Barium (Ba), ppt

≤100

Aluminum (Al), ppt

≤100

Tantalum (Ta), ppt

≤100

Potassium (K), ppt

≤100

Gold (Au), ppt

≤100

Calcium (Ca), ppt

≤100

Thallium (Tl), ppt

≤100

Titanium (Ti), ppt

≤100

Lead (Pb), ppt

≤100

Vanadium (V), ppt

≤100

Bismuth (Bi), ppt

≤100

Chromium (Cr), ppt

≤100

Particles (≥0.2μm), pcs/mL

≤300

Manganese (Mn), ppt

≤100

Particles (≥0.3μm), pcs/mL

≤100

Iron (Fe), ppt

≤100

Particles (≥0.5μm), pcs/mL

≤5

Cobalt (Co), ppt

≤100

End of Report

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