Product Identification
|
Item |
Specification |
|
Product Name |
G4 Hydrochloric Acid |
|
Product Category |
Semiconductor Electronic Wet Chemical |
|
Chemical Name |
Hydrochloric Acid |
|
Chemical Formula |
HCl |
|
CAS No. |
7647-01-0 |
|
Molecular Weight |
36.46 |
|
UN Number |
1789 |
|
Grade |
SEMI G4 Ultra-High Purity Electronic Grade |
Product Overview
G4 Hydrochloric Acid is a high-purity inorganic acid specially purified for semiconductor wafer fabrication and advanced microelectronics manufacturing. Produced via ultra-purification, low-contamination filtration and clean-room filling processes, this product features ultra-low trace metal ions, anionic impurities and micro-particles, fully complying with SEMI G4 industry specifications.
It is a core wet chemical for semiconductor front-end processes, effectively removing metallic contaminants, ionic residues and oxide impurities on wafer surfaces. Strict impurity control eliminates micro-contamination risks, ensuring high yield and stable performance for advanced chip manufacturing processes.
Appearance: Colorless, transparent and clear liquid with slight pungent odor
Technical Specifications (SEMI G4 Standard)
|
Test Item |
Specification |
|
HCl Assay |
36.0 ~ 38.0 wt% |
|
Appearance |
Colorless & clear transparent liquid |
|
Color (APHA) |
≤ 10 |
|
Density @ 20°C |
1.18 ~ 1.19 g/cm³ |
|
Evaporation Residue |
≤ 50 ppb |
|
Individual Trace Metals (Na, K, Ca, Mg, Fe, Cu, Al, Zn, Ni, Cr) |
≤ 10 ppb each |
|
Sulfate (SO₄²⁻) |
≤ 50 ppb |
|
Nitrate (NO₃⁻) |
≤ 50 ppb |
|
Free Chlorine (Cl₂) |
≤ 50 ppb |
|
Phosphate (PO₄³⁻) |
≤ 30 ppb |
|
Particles ≥0.2μm |
≤ 100 pcs/mL |
Note: All test data is based on batch-specific COA (Certificate of Analysis).
Applications (Semiconductor Wet Process)
Wafer Surface Cleaning: Remove residual metal ions, inorganic contaminants and surface oxide layers on silicon wafers, improve wafer surface cleanliness for subsequent etching and deposition processes.
Semiconductor Wet Etching: Used for precision micro-etching of silicon-based materials and compound semiconductor substrates with stable etching rate and uniform processing effect.
Process Solution Preparation: Formulate mixed cleaning and etching solutions for RCA cleaning process, matching advanced semiconductor front-end manufacturing requirements.
Advanced Packaging & MEMS Process: Surface treatment and impurity removal for MEMS devices, chip packaging and microelectronic component processing.
Packaging & Filling Standard
Packaging Type: Clean-grade HDPE sealed drum / IBC clean tote
Common Specification: 25kg / 30kg small drum, 1000kg IBC tote
Filling Environment: Class 1000 clean room, zero secondary contamination, strictly controlled particle and impurity introduction
Sealing Standard: Professional acid-resistant sealed packaging, anti-volatilization and anti-leakage
Storage & Shelf Life
● Store in cool, dry, ventilated and dedicated chemical warehouse, keep tightly sealed, away from direct sunlight, high temperature and heat sources.
● Isolate from alkaline substances, oxidants and organic chemicals to avoid chemical reaction and contamination.
● Strictly avoid long-term open placement to prevent volatile deterioration and impurity absorption.
● Shelf Life: 12 months under standard sealed storage conditions
Handling & Safety Precautions
● Hydrochloric acid is corrosive and volatile. Operators must wear complete PPE: acid-resistant gloves, chemical goggles, corrosion-resistant apron and protective clothing.
● Operate in ventilated environment; avoid inhalation of volatile gas and direct contact with skin and eyes.
● Dilution operation: slowly add acid into water, never add water into concentrated hydrochloric acid to prevent splashing and injury.
● In case of contact or leakage, follow SDS emergency guidelines for timely cleaning and disposal.
● For full hazard classification, transportation rules and first-aid measures, refer to the official SDS document.
Quality Assurance
Each batch of G4 Hydrochloric Acid is produced and inspected in accordance with SEMI G4 international standards. Every shipment is accompanied with an official batch COA. All production, purification and filling processes adopt strict clean-room contamination control to ensure stable and consistent product quality for high-end semiconductor manufacturing applications.
Hydrochloric acid Specification
|
Product Name |
Grade |
Relative molecular mass |
Molecular formula |
|
Hydrochloric acid |
Electronic chemicals G4 |
36.46 |
HCl |
|
Inspect items |
Specifications |
Inspect items |
Specifications |
|
Appearance |
Colorless transparent aqueous hydrogen chloride solution |
Nickel (Ni), ppt |
≤100 |
|
Assay (HCl), % |
36.0~38.0 |
Cupric (Cu), ppt |
≤100 |
|
Chromaticity, Hazen units |
≤10 |
Zinc (Zn), ppt |
≤100 |
|
Burning residue (sulfate basis), ppm |
≤3 |
Gallium (Ga), ppt |
≤100 |
|
free available chlorine (Cl), ppb |
≤100 |
Germanium (Ge), ppt |
≤100 |
|
Ammonium (NH₄), ppb |
≤100 |
Arsenic (As), ppt |
≤100 |
|
Sulfate (SO₄), ppb |
≤100 |
Stantium (Sr), ppt |
≤100 |
|
Sulfites (SO₂), ppb |
≤100 |
Zirconium (Zr), ppt |
≤100 |
|
Phosphate (PO₄), ppb |
≤100 |
Niobium (Nb), ppt |
≤100 |
|
Lithium (Li), ppt |
≤100 |
Molybdenum (Mo), ppt |
≤100 |
|
Berylium (Be), ppt |
≤100 |
Silver (Ag), ppt |
≤100 |
|
Boron (B), ppt |
≤100 |
Cadmium (Cd), ppt |
≤100 |
|
Sodium (Na), ppt |
≤100 |
Tin (Sn), ppt |
≤100 |
|
Magnesium (Mg), ppt |
≤100 |
Barium (Ba), ppt |
≤100 |
|
Aluminum (Al), ppt |
≤100 |
Tantalum (Ta), ppt |
≤100 |
|
Potassium (K), ppt |
≤100 |
Gold (Au), ppt |
≤100 |
|
Calcium (Ca), ppt |
≤100 |
Thallium (Tl), ppt |
≤100 |
|
Titanium (Ti), ppt |
≤100 |
Lead (Pb), ppt |
≤100 |
|
Vanadium (V), ppt |
≤100 |
Bismuth (Bi), ppt |
≤100 |
|
Chromium (Cr), ppt |
≤100 |
Particles (≥0.2μm), pcs/mL |
≤300 |
|
Manganese (Mn), ppt |
≤100 |
Particles (≥0.3μm), pcs/mL |
≤100 |
|
Iron (Fe), ppt |
≤100 |
Particles (≥0.5μm), pcs/mL |
≤5 |
|
Cobalt (Co), ppt |
≤100 |
End of Report |
- |
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