Product Identification
|
Item |
Specification |
|
Product Name |
G4 Nitric Acid |
|
Product Category |
Semiconductor Electronic Wet Chemical |
|
Chemical Name |
Nitric Acid |
|
Chemical Formula |
HNO₃ |
|
CAS No. |
7697-37-2 |
|
Molecular Weight |
63.01 |
|
UN Number |
2031 |
|
Grade |
SEMI G4 Ultra-High Purity Electronic Grade |
Product Overview
G4 Nitric Acid is a high-purity strong oxidizing inorganic acid specially developed for semiconductor wafer manufacturing and advanced microelectronics processes. Manufactured via multi-stage distillation, ultra-fine purification and Class 1000 clean-room filling processes, this product strictly controls trace metal ions, anionic impurities and airborne particles, fully complying with SEMI G4 international semiconductor standards.
It serves as a critical wet chemical for semiconductor front-end cleaning and metal etching. With strong oxidizing and cleaning capabilities, it efficiently removes metallic contaminants, organic residues and surface micro-defects on silicon wafers. Ultra-low impurity content eliminates process contamination risks, stabilizing wafer surface quality and improving production yield for advanced chip fabrication.
Appearance: Colorless or slightly pale yellow transparent volatile liquid
Technical Specifications (SEMI G4 Standard)
|
Test Item |
Specification |
|
HNO₃ Assay |
69.0 ~ 71.0 wt% |
|
Appearance |
Colorless or pale yellow clear transparent liquid |
|
Color (APHA) |
≤ 10 |
|
Density @ 20°C |
1.40 ~ 1.42 g/cm³ |
|
Evaporation Residue |
≤ 50 ppb |
|
Individual Trace Metals (Na, K, Ca, Mg, Fe, Cu, Al, Zn, Ni, Cr) |
≤ 10 ppb each |
|
Sulfate (SO₄²⁻) |
≤ 50 ppb |
|
Chloride (Cl⁻) |
≤ 30 ppb |
|
Phosphate (PO₄³⁻) |
≤ 30 ppb |
|
Particles ≥0.2μm |
≤ 100 pcs/mL |
Note: All test data is based on batch-specific COA (Certificate of Analysis).
Applications (Semiconductor Wet Process)
Wafer Heavy Metal Cleaning: Effectively remove heavy metal contaminants such as iron, copper, zinc and residual inorganic impurities on silicon wafer surfaces. Its strong oxidizing property ensures thorough cleaning without introducing secondary contamination, meeting ultra-high cleanliness requirements for advanced wafer processes.
Metal Thin Film Etching: Applied for fine etching and removal of various metal thin films in semiconductor manufacturing, with stable etching rate and excellent uniformity, suitable for precision pattern processing of microelectronic devices.
Compound Wet Cleaning Solution Formulation: Used to prepare mixed acid cleaning solutions for semiconductor RCA standard cleaning processes, cooperating with other electronic chemicals to remove organic residues, particles and ionic impurities comprehensively.
MEMS and Advanced Packaging Treatment: Suitable for surface cleaning, impurity removal and micro-etching of MEMS devices, semiconductor sensors and chip packaging components, adapting to high-precision microelectronic manufacturing standards.
Packaging & Filling Standard
Packaging Type: Clean-grade corrosion-resistant HDPE sealed drum, dedicated nitric acid chemical packaging
Common Specification: 25kg / 30kg small drum, 1000kg corrosion-resistant IBC tote
Filling Environment: Class 1000 clean room, closed ultra-pure filling system, strictly eliminate secondary particle and impurity contamination
Sealing Standard: Anti-oxidation, anti-volatile and leak-proof sealed structure, preventing product deterioration and external pollution
Storage & Shelf Life
● Store in cool, dry, ventilated and dedicated corrosive chemical warehouse, keep tightly sealed, away from direct sunlight, high temperature and heat sources to avoid thermal decomposition.
● Strictly isolate from combustible substances, reducing agents, alkaline chemicals and organic materials to prevent violent oxidation reactions and safety hazards.
● Avoid long-term light exposure to prevent discoloration and purity decline caused by photolysis.
● Shelf Life: 12 months under standard sealed and dark storage conditions
Handling & Safety Precautions
● Nitric acid is strongly corrosive and oxidizing with volatility. Operators must wear complete professional PPE: acid-resistant gloves, fully enclosed chemical goggles, corrosion-resistant apron and protective work clothes.
● All handling, dilution and dosing operations must be performed in a certified fume hood; avoid inhalation of volatile toxic gas and direct contact with skin, eyes and mucous membranes.
● During dilution, slowly add nitric acid into deionized water; never pour water into concentrated nitric acid to prevent liquid splashing and chemical burns.
● In case of accidental contact, spillage or leakage, implement emergency disposal immediately in accordance with standard operating procedures and SDS guidelines.
● Refer to the official SDS document for full hazard classification, transportation regulations and detailed first-aid measures.
Quality Assurance
Each batch of G4 Nitric Acid is produced, purified and inspected in strict accordance with SEMI G4 international semiconductor industry specifications. Every shipment is accompanied by a batch-specific official COA. The entire production and filling process adopts strict clean-room contamination control and oxidation-resistant management, ensuring ultra-high purity, low impurity and stable batch consistency, fully satisfying the rigorous requirements of advanced semiconductor wet manufacturing processes.
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